Simulation of atomic removal mechanism of silicon carbide using reactive molecular dynamics

YUAN Ze-wei,TANG Mei-ling,LANG Ling-qi,TAI Li-gang,GAO Xing-jun

PDF(4943 KB)
PDF(4943 KB)
Journal of Shenyang University of Technology ›› 2021, Vol. 43 ›› Issue (1) : 42-47. DOI: 10.7688/j.issn.1000-1646.2021.01.08

Simulation of atomic removal mechanism of silicon carbide using reactive molecular dynamics

    {{javascript:window.custom_author_en_index=0;}}
  • {{article.zuoZhe_EN}}
Author information +
History +

HeighLight

{{article.keyPoints_en}}

Abstract

{{article.zhaiyao_en}}

Key words

QR code of this article

Cite this article

EndNote

Ris (Procite)

Bibtex

Download Citations
{{article.zuoZheEn_L}}. {{article.title_en}}. {{journal.qiKanMingCheng_EN}}. 2021, 43(1): 42-47 https://doi.org/10.7688/j.issn.1000-1646.2021.01.08

References

Publishing order | Descend order by publishing year | Descend order by cited within

References

{{article.reference}}

Funding

RIGHTS & PERMISSIONS

{{article.copyrightStatement_en}}
{{article.copyrightLicense_en}}
PDF(4943 KB)

Accesses

Citation

Detail
Sections
Recommended

/

〈 〉